APT20GN60B Datasheet, PDF (4/6 Pages) Advanced Power Technology – IGBT

12
10
V_GE = 15V
8
6
4
2
V_CE = 400V
T_J = 25°C, T_J =125°C
R_G = 4.3Ω
L = 100 µH
0
5 10 15 20 25 30 35 40 45
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
25
R_G = 4.3Ω, L = 100µH, V_CE = 400V
20
15
10
T_J = 25 or 125°C,V_GE = 15V
5
0
5 10 15 20 25 30 35 40 45
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
1400
1200
V_CE = 400V
V_GE = +15V
R_G = 4.3Ω
1000
800
T_J = 125°C
600
400
200
T_J = 25°C
0
5 10 15 20 25 30 35 40 45
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
3500
3000
V_CE = 400V
V_GE = +15V
T_J = 125°C
2500
E_on2,40A
2000
1500
E_off,40A
1000
500 ^Eon2,20A
E_off,20A
E_off,10A
0
E_on2,10A
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT20GN60B_S(G)
250
200
150
100
V_GE =15V,T_J=125°C
V_GE =15V,T_J=25°C
50
V_CE = 400V
R_G = 4.3Ω
L = 100 µH
0
5 10 15 20 25 30 35 40 45
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
140
120
T_J = 125°C, V_GE = 15V
100
80
T_J = 25°C, V_GE = 15V
60
40
20
0 ^{RG = 4.3Ω, L = 100µH, VCE = 400V}
5 10 15 20 25 30 35 40 45
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
1400
1200
V_CE = 400V
V_GE = +15V
R_G = 4.3Ω
1000
T_J = 125°C
800
600
T_J = 25°C
400
200
0
5 10 15 20 25 30 35 40 45
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
1400
1200
V_CE = 400V
V_GE = +15V
R_G = 4.3Ω
1000
E_on2,40A
E_off,40A
800
600 ^Eoff,20A
400 ^Eoff,^10A
200
E_on2,20A
E_on2,10A
0
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature