ARF1519 Datasheet, PDF (4/4 Pages) Advanced Power Technology – RF POWER MOSFET

ARF1519 -- 13.56 MHz Test Circuit
C7 C9
RF
Input _T1
L3
L1
C8
200V
C10
Output
L2 _C4
DUT
C5 C6
C1-C3 1nF X7R 100V smt
C4 2x 8.2 nF 1kV COG
C5 270pF x2 ATC 100C
C7-C10 8.2 nF 1kv COG
C11 390 + 27 pF ATC 100C
L1 2uH - 22t #24 enam. .312" dia.
L2 368 nH - 5t #12 .625" dia .5" l
L3 500nH 2t on 850u .5" bead
R1 2.2k 0.5W
T1 10:1t transformer
C1 C2 C3
R1
13.56 MHz Test Amp
ARF1519
T1
J1
Parts placement - Not to Scale.
J2
RF 12-04
Thermal Considerations and Package
Mounting:
The rated 1350W power dissipation is only
available when the package mounting surface is
at 25°C and the junction temperature is 200°C.
The thermal resistance between junctions and
case mounting surface is 0.12°C/W. When instal-
led, an additional thermal impedance of 0.1°C/W
between the package base and the mounting sur-
face is typical. Insure that the mounting surface
is smooth and flat. Thermal joint compound
must be used to reduce the effects of small sur-
face irregularities. The heatsink should incorpo-
rate a copper heat spreader to obtain best re-
sults. Use 4-40 or M3 screws torqued to 1.2 Nm.
.250
.250
.125d
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between
leads and mounting surface is beryllium oxide-
BeO. Beryllium oxide dust is toxic when in-
haled. Care must be taken during handling
and mounting to avoid damage to this area
These devices must never be thrown away
with general industrial or domestic waste.
.466
.150r .500
ARF1519
BeO 1525-100
.750
1.000
1.250
1.500
.500
.300
.200
.005 .040
D
G
S
1
2
3
4
1 Drain
2 Source
3 Source
4 Gate