ARF1519 Datasheet, PDF (2/4 Pages) Advanced Power Technology – RF POWER MOSFET

DYNAMIC CHARACTERISTICS
Symbol Characteristic
C_iss
Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
Test Conditions
V_GS = 0V
V_DS = 150V
f = 1 MHz
ARF1519
MIN TYP MAX UNIT
4600 5600
310 350 pF
90 120
FUNCTIONAL CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
G_PS Common Source Amplifier Power Gain
η
Drain Efficiency
Ψ
Electrical Ruggedness VSWR 10:1
f = 13.56MHz
V_GS = 0V V_DD = 200V
P_out = 750W
17
20
dB
70
75
%
No Degradation in Output Power
1 _{Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%.}
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Per transistor section unless otherwise specified.
C_iss
60
V_DS> I_D (ON) x R_DS (ON)MAX.
250μSEC. PULSE TEST
50
@ <0.5 % DUTY CYCLE
T_J = -55°C
40
C_oss
30
C_rss
.1
1
10
100 200
Figure ^V1,^DT^Sy^, p^Di^Rca^Al^INC^-a^Tp^Oa^-c^Sit^Oa^Unc^Re^Cv^Es^V. D^Or^La^Ti^An^G-to^E-S^(Vo^Ou^Lrc^Te^S)Voltage
20
10
T_J = +25°C
T_J = +125°C
0
0 1 2 3 4 5 67
V_FGiSg,_uG_reAT_2,E_T-T_yO_pi-_cS_aO_l U_TrR_aC_nsE_feV_rO_CL_hTA_arG_aE_ct(_eV_riO_sL_tiT_cS_s)