APTGT100DU120TG Datasheet, PDF (4/5 Pages) Microsemi Corporation – Dual common source Fast Trench + Field Stop IGBT Power Module

APTGT100DU120TG
Typical Performance Curve
Output Characteristics (VGE=15V)
200
150
TJ=2 5°C
TJ=125 °C
100
50
Output Characteristics
200
T_J = 125°C
150
VGE=17V
VGE=13V
100
VGE=15V
VG E=9V
50
0
0
1
2
3
4
V_CE (V)
0
0
1
2
3
4
V_CE (V)
200
175
150
125
100
75
50
25
0
5
Transfert Characteristics
TJ=25°C
TJ=125°C
TJ=125°C
6 7 8 9 10 11 12
VGE (V)
Switching Energy Losses vs Gate Resistance
25
VCE = 600V
20
VGE =15V
IC = 100A
T_J = 125°C
15
Eon
Eoff
10
Er
5
0
0
5
10
15
20
25
Gate Resistance (ohms)
Energy losses vs Collector Current
25
VCE = 600V
20 ^{VGE = 15V}
RG = 3.9 Ω
TJ = 125°C
15
Eon
Eoff
Er
10
Eon
5
0
0 25 50 75 100 125 150 175 200
I_C (A)
Reverse Bias Safe Operating Area
240
200
160
120
80 VGE=15V
TJ =12 5°C
40 RG=3.9 Ω
0
0
300
600 900
VCE (V)
1200 1500
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.3
IGBT
0.25 0.9
0.2 0.7
0.15 0.5
0.1 ^0.3
0.05 ^0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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