APTGT100DU120TG Datasheet, PDF (1/5 Pages) Microsemi Corporation – Dual common source Fast Trench + Field Stop IGBT Power Module

APTGT100DU120TG
Dual common source
Fast Trench + Field Stop IGBT^®
Power Module
V_CES = 1200V
I_C = 100A @ Tc = 80°C
G1
E1
NTC1
C1
Q1
C2
Q2
E
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
G2
Features
E2
• Fast Trench + Field Stop IGBT^® Technology
- Low voltage drop
- Low tail current
NTC2
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
• Internal thermistor for temperature monitoring
G2
C2
E2
C1
C2
E
E1
E2
NTC2
G1
G2
NTC1
Absolute maximum ratings
Symbol
Parameter
V_CES Collector - Emitter Breakdown Voltage
I_C Continuous Collector Current
I_CM
V_GE
P_D
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Max ratings Unit
1200
V
T_C = 25°C
140
T_C = 80°C
100
A
T_C = 25°C
200
±20
V
T_C = 25°C
480
W
T_j = 125°C 200A @ 1100V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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