APTGF90A60T3AG Datasheet, PDF (4/5 Pages) Microsemi Corporation – Phase leg NPT IGBT Power Module Power Module

APTGF90A60T3AG
Typical Performance Curve
Output Characteristics (V_GE=15V)
200
T_J=25°C
160
120
T_J=125°C
80
40
0
0 0.5 1 1.5 2 2.5 3 3.5
V_CE (V)
200
175
150
125
100
75
50
25
0
5
Transfert Characteristics
T_J=125°C
T_J=25°C
6 7 8 9 10 11 12
V_GE (V)
Switching Energy Losses vs Gate Resistance
3.5
3
Eoff
2.5
2
1.5
1
0.5
0
0
Eon
V_CE = 300V ; V_GE =15V
I_C = 100A ; T_J = 125°C
2
4
6
8
10
Gate Resistance (ohms)
Output Characteristics
200
T_J = 125°C
175
V_GE=15V
150
V_GE=20V
125
V_GE=12V
100
75
V_GE=9V
50
25
0
0
1
2
3
4
5
V_CE (V)
Energy losses vs Collector Current
5
V_CE = 300V
4 ^{VGE = 15V}
R_G = 2.2 Ω
Eoff
T_J = 125°C
3
2
Eon
1
0
0 25 50 75 100 125 150 175 200
I_C (A)
Reverse Safe Operating Area
250
200
150
100
V_GE=15V
50 ^TJ^=125°C
R_G=2.2 Ω
0
0 100 200 300 400 500 600
V_CE (V)
0.25
0.9
0.2
0.7
0.15
0.5
0.1
0.3
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
IGBT
0.05
0.1
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
www.microsemi.com
4–5