APTC90H12T1G Datasheet, PDF (4/5 Pages) Microsemi Corporation – Full - Bridge Super Junction MOSFET Power Module

APTC90H12T1G
Typical performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.6
0.5
0.9
0.4
0.7
0.3
0.5
0.2
0.3
0.1
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
120
V_GS=20, 8V
6V
80
5V
40
Breakdown Voltage vs Temperature
1000
975
950
925
0
0
5
10
15
20
V_DS, Drain to Source Voltage (V)
1000
Maximum Safe Operating Area
100
limited by R_DSon
100 µs
10
1
0.1
1
Single pulse
T_J=150°C
T_C=25°C
10 ms
10
100
1000
V_DS, Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
Ciss
10000
1000
100
Coss
10
Crss
1
0 25 50 75 100 125 150 175 200
V_DS, Drain to Source Voltage (V)
900
25
50
75
100 125
T_J, Junction Temperature (°C)
DC Drain Current vs Case Temperature
35
30
25
20
15
10
5
0
25 50 75 100 125 150
T_C, Case Temperature (°C)
Gate Charge vs Gate to Source Voltage
10
V_DS=400V
8 I_D=26A
T_J=25°C
6
4
2
0
0 50 100 150 200 250 300
Gate Charge (nC)
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