APTC90H12T1G Datasheet, PDF (1/5 Pages) Microsemi Corporation – Full - Bridge Super Junction MOSFET Power Module

APTC90H12T1G
Full - Bridge
Super Junction MOSFET
Power Module
V_DSS = 900V
R_DSon = 120mΩ max @ Tj = 25°C
I_D = 30A @ Tc = 25°C
3
4
Q1
Q3
5
2
61
Q2
Q4
7
9
8
10
11
NTC
12
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
•
- Ultra low R_DSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Pins 3/4 must be shorted together
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
I_DM
V_GS
R_DSon
P_D
I_AR
E_AR
E_AS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Max ratings Unit
900
V
T_c = 25°C
30
T_c = 80°C
23
A
75
±20
V
120
mΩ
T_c = 25°C
250
W
8.8
A
2.9
1940
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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