APT54GA60BD30 Datasheet, PDF (4/9 Pages) Microsemi Corporation – High Speed PT IGBT

Typical Performance Curves
21
V_CE = 400V
20
T_J = 25°C, or 125°C
R_G = 4.7Ω
L = 100μH
19
18
V_GE = 15V
17
16
15
14
0 10 20 30 40 50 60 70
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
70
R_G = 4.7Ω, L = 100μH, V_CE = 400V
60
50
40
30
20
10
T_J = 25 or 125°C,V_GE = 15V
0
0 10 20 30 40 50 60 70
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
2400
2000
V_CE = 400V
V_GE = +15V
R_G =4.7Ω
1600
1200
T_J = 125°C
800
T_J = 25°C
400
0
0 10 20 30 40 50 60 70
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
6000
5000
V_CE = 400V
V_GE = +15V
T_J = 125°C
E_on2,64A
4000
3000
E_off,64A
2000
E_on2,32A
1000
E_off,32A
E_on2,16A
E_off,16A
0
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
APT54GA60B_SD30
200
160
V_GE =15V,T_J=125°C
120
80
V_GE =15V,T_J=25°C
40
V_CE = 400V
R_G = 4.7Ω
L = 100μH
0
0 10 20 30 40 50 60 70
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
200
160
120
T_J = 125°C, V_GE = 15V
80
T_J = 25°C, V_GE = 15V
40
R_G = 4.7Ω, L = 100μH, V_CE = 400V
0
0 10 20 30 40 50 60 70
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
2400
2000
V_CE = 400V
V_GE = +15V
R_G = 4.7Ω
1600
1200
T_J = 125°C
800
400
T_J = 25°C
0 _{0 10 20 30 40 50 60 70}
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
2400
2000
V_CE = 400V
V_GE = +15V
R_G = 4.7Ω
1600
E_on2,64A
E_off,64A
1200
800
400
E_on2,32A
E_off,32A
E_on2,16A
E_off,16A
0
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature