APT54GA60BD30 Datasheet, PDF (2/9 Pages) Microsemi Corporation – High Speed PT IGBT

Dynamic Characteristics
Symbol Parameter
C_ies
Input Capacitance
C_oes
Output Capacitance
C_res
Reverse Transfer Capacitance
Q_g
Total Gate Charge ³
Q_ge
Gate-Emitter Charge
Q_gc
Gate- Collector Charge
SSOA
t_d(on)
t_r
t_d(off)
t_f
E_on2
E_off
t_d(on)
t_r
t_d(off)
t_f
E_on2
E_off
Switching Safe Operating Area
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy ⁶
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy ⁶
T_J = 25°C unless otherwise specified
Test Conditions
Min
Capacitance
V_GE = 0V, V_CE = 25V
f = 1MHz
Gate Charge
V_GE = 15V
V_CE= 300V
I_C = 32A
T_J = 150°C, R_G = 10Ω ⁴, V_GE = 15V,
161
L= 100uH, V_CE = 600V
Inductive Switching (25°C)
V_CC = 400V
V_GE = 15V
I_C = 32A
R_G = 4.7Ω⁴
T_J = +25°C
Inductive Switching (125°C)
V_CC = 400V
V_GE = 15V
I_C = 32A
R_G = 4.7Ω⁴
T_J = +125°C
APT54GA60B_SD30
Typ
4130
350
45
158
28
Max
52
Unit
pF
nC
A
17
20
ns
112
86
534
μJ
466
16
21
ns
146
145
891
μJ
838
Thermal and Mechanical Characteristics
Symbol Characteristic
R_θJC
R_θJC
W_T
Torque
Junction to Case Thermal Resistance (IGBT)
Junction to Case Thermal Resistance (Diode)
Package Weight
Mounting Torque (TO-247 Package), 4-40 or M3 screw
Min Typ Max Unit
-
-
0.3
°C/W
0.8
-
5.9
-
g
10
in·lbf
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
3 See Mil-Std-750 Method 3471.
4 R_G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 E_on2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
6 E_off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.