APT50M38JFLL_04 Datasheet, PDF (4/5 Pages) Microsemi Corporation – POWER MOS 7 R FREDFET

352
OPERATION HERE
LIMITED BY R_DS (ON)
100
100µS
1mS
10
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
1
10
100
500
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 91A
12
VDS=100V
VDS=250V
8
VDS=400V
4
0
0 50 100 150 200 250 300 350 400
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
140
120
t_d(off)
100
80
60
V_DD = 333V
R_G = 5Ω
T_J = 125°C
L = 100µH
40
t_d(on)
20
0
20 40 60 80 100 120 140
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
3500
V_DD = 333V
3000
R_G = 5Ω
T_J = 125°C
L = 100µH
2500 E_ON includes
diode reverse recovery.
E_on
2000
1500
1000
500
E_off
0
20 40 60 80 100 120 140
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
40,000
10,000
1,000
100
APT50M38JFLL
Ciss
Coss
Crss
10
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
400
100
TJ =+150°C
TJ =+25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
120
V_DD = 333V
R_G = 5Ω
100 _{TJ = 125°C}
L = 100µH
t_f
80
60
40
20
t_r
0
20 40 60 80 100 120 140
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
3500
E_off
3000
2500
E_on
2000
1500
V_DD = 333V
1000
I_D = 88A
T_J = 125°C
500
0
L = 100µH
E_ON includes
diode reverse recovery.
0
5
10
15
20
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE