APT50M38JFLL_04 Datasheet, PDF (2/5 Pages) Microsemi Corporation – POWER MOS 7 R FREDFET

DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_on
E_off
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ³
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy ⁶
Turn-off Switching Energy
Turn-on Switching Energy ⁶
Turn-off Switching Energy
V_GS = 0V
V_DS = 25V
f = 1 MHz
V_GS = 10V
V_DD = 250V
I_D = 88A @ 25°C
RESISTIVE SWITCHING
V_GS = 15V
V_DD = 250V
I_D = 88A @ 25°C
R_G = 0.6Ω
INDUCTIVE SWITCHING @ 25°C
V_DD = 333V, V_GS = 15V
I_D = 88A, R_G = 3Ω
INDUCTIVE SWITCHING @ 125°C
V_DD = 333V V_GS = 15V
I_D = 88A, R_G = 3Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
I_S
Continuous Source Current (Body Diode)
I_{SM Pulsed Source Current} 1 _{(Body Diode)}
V_{SD Diode Forward Voltage} 2 _{(VGS = 0V, IS = -88A)}
dv_/dt
Peak Diode Recovery ^dv/_dt ⁵
t_rr
Reverse Recovery Time
(I_S = -88A, ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
Reverse Recovery Charge
Q_rr
(I_S = -88A, ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
Peak Recovery Current
I_RRM
(I_S = -88A, ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
THERMAL CHARACTERISTICS
Symbol Characteristic
R_θJC
R_θJA
Junction to Case
Junction to Ambient
APT50M38JFLL
MIN TYP MAX UNIT
12000
2540
pF
125
270
70
nC
140
17
22
ns
50
4
1295
940
µJ
1875
1165
MIN TYP MAX UNIT
88 _Amps
352
1.3 Volts
15 V/ns
300
ns
600
2.2
µC
9.0
16
33
Amps
MIN TYP MAX UNIT
0.18
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T_j = +25°C, L = 0.93mH, R_G = 25Ω, Peak I_L = 88A
5 ^dv/_dt numbers reflect the limitations of the test circuit rather than the
device itself. I_S ≤ -I_D88A ^di/_dt ≤ 700A/µs V_R ≤ 500 T_J ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.20
0.18
0.9
0.16
0.14
0.7
0.12
0.10
0.5
Note:
0.08
t1
0.06
0.3
t2
0.04
0.1
0.02
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
0.05
SINGLE PULSE
0
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION