APT50GT120JU2 Datasheet, PDF (4/7 Pages) Microsemi Corporation – Boost chopper Trench + Field Stop IGBT

APT50GT120JU2
Output Characteristics (V_GE=15V)
100
75
T_J=25°C
T_J=125°C
50
25
Output Characteristics
100
T_J = 125°C
75
V_GE=17V
V_GE=13V
V_GE=15V
50
V_GE=9V
25
0
0
1
2
3
4
V_CE (V)
0
0
1
2
3
4
V_CE (V)
Transfert Characteristics
100
T_J=25°C
75
T_J=125°C
50
25
0
5 6 7 8 9 10 11 12
V_GE (V)
Switching Energy Losses vs Gate Resistance
12
V_CE = 600V
10 _{VGE =15V}
8 ^{IC = 50A}
T_J = 125°C
Eon
Eoff
6
4
2
0
5
10
15
20
25
30
Gate Resistance (ohms)
Energy losses vs Collector Current
20
V_CE = 600V
Eon
16 V_GE = 15V
R_G = 18 Ω
12 TJ = 125°C
8
Eoff
4
0
0
25
50
75
100
I_C (A)
Reverse Safe Operating Area
120
100
80
60
40 V_GE=15V
T_J=125°C
20 _{RG=18 Ω}
0
0
400
800
1200
V_CE (V)
1600
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.4
0.35
0.9
IGBT
0.3
0.7
0.25
0.2
0.5
0.15
0.3
0.1
0.05
0.1
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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