APT50GT120JU2 Datasheet, PDF (3/7 Pages) Microsemi Corporation – Boost chopper Trench + Field Stop IGBT

APT50GT120JU2
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
V_F Diode Forward Voltage
I_F = 30A
I_F = 60A
I_F = 30A
T_j = 125°C
I_RM Maximum Reverse Leakage Current
V_R = 1200V
V_R = 1200V
T_j = 25°C
T_j = 125°C
C_T Junction Capacitance
V_R = 200V
Reverse Recovery Time
t_rr
Reverse Recovery Time
I_F=1A,V_R=30V
di/dt =100A/µs
T_j = 25°C
T_j = 25°C
T_j = 125°C
I_RRM
Maximum Reverse Recovery Current
I_F = 30A
V_R = 800V
di/dt =200A/µs
T_j = 25°C
T_j = 125°C
Q_rr Reverse Recovery Charge
T_j = 25°C
T_j = 125°C
2.0 2.5
2.3
V
1.8
250
500
µA
32
pF
31
370
ns
500
5
A
12
660
nC
3450
t_rr Reverse Recovery Time
I_F = 30A
220
ns
Q_rr Reverse Recovery Charge
V_R = 800V
T_j = 125°C
4650
nC
I_RRM Maximum Reverse Recovery Current ^{di/dt =1000A/µs}
37
A
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
R_thJC Junction to Case Thermal Resistance
IGBT
Diode
0.36
1.1 ^°C/W
R_thJA
V_ISOL
T_J,T_STG
T_L
Torque
Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
2500
-55
20
V
150
300
°C
1.5 N.m
Wt Package Weight
29.2
g
Typical IGBT Performance Curve
Operating Frequency vs Collector Current
60
50
V _CE=600V
D=50%
R =18 Ω
40
G
T_J =125°C
30
20
10
0
0 10 20 30 40 50 60 70 80
I_C (A)
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