APT50GS60BRDL Datasheet, PDF (4/9 Pages) Microsemi Corporation – Resonant Mode Combi IGBT

TYPICAL PERFORMANCE CURVES
20
18
16
V_GE = 15V
14
12
10
8
6
4 ^VCE ^{= 400V}
T_J = 25°C, T_J =125°C
2 R_G = 4.7Ω
L = 100μH
0
0
20 40 60
80 100 120
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
100
R_G = 4.7Ω, L = 100μH, V_CE = 400V
80
T_J = 25 or 125°C,V_GE = 15V
60
40
20
0
0 20 40 60 80 100 120
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
6000
5000
V_CE = 400V
V_GE = +15V
R_G = 4.7Ω
4000
T_J = 125°C,V_GE =15V
3000
2000
1000
T_J = 25°C,V_GE =15V
0
0 20 40 60 80 100 120
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
10
V_CE = 400V
V_GE = +15V
T_J = 125°C
8
E_on2,100A
6
E_off,100A
4
E_on2,50A
2
E_off,50A
E_off,25A
0
E_on2,25A
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT50GS60BRDL(G)
300
250
200 ^{VGE =15V,TJ=125°C}
150
V_GE =15V,T_J=25°C
100
50 V_CE = 400V
R_G = 4.7Ω
L = 100μH
0
0 20 40 60 80 100 120
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
80
R_G = 4.7Ω, L = 100μH, V_CE = 400V
70
60
50
40
T_J = 125°C, V_GE = 15V
30
20
10
T_J = 25°C, V_GE = 15V
0
0 20 40 60 80 100 120
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
2500
2000
V_CE = 400V
V_GE = +15V
R_G = 4.7Ω
T_J = 125°C, V_GE = 15V
1500
1000
500
T_J = 25°C, V_GE = 15V
0
0 20 40 60 80 100 120
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
6
V_CE = 400V
V_GE = +15V
5 ^{RG = 4.7Ω}
E_on2,100A
4
3
E_off,100A
2
E_on2,50A
1
E_off,50A
E_on2,25A
0
E_off,25A
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature