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APT50GS60BRDL Datasheet, PDF (2/9 Pages) Microsemi Corporation – Resonant Mode Combi IGBT
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Static Characteristics
TJ = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
Min
VBR(CES) Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 250μA
600
∆VBR(CES)/∆TJ Breakdown Voltage Temperature Coeff
VCE(ON) Collector-Emitter On Voltage 4
VGE(th) Gate-Emitter Threshold Voltage
∆VGE(th)/∆TJ Threshold Voltage Temp Coeff
ICES
Zero Gate Voltage Collector Current
IGES
Gate-Emitter Leakage Current
Reference to 25°C, IC = 250μA
-
VGE = 15V
IC = 50A
TJ = 25°C
-
TJ = 125°C -
3
VGE = VCE, IC = 1mA
-
VCE = 600V,
VGE = 0V
TJ = 25°C
-
TJ = 125°C -
VGE = ±20V
-
APT50GS60BRDL(G)
Typ Max Unit
-
-
V
0.60
-
V/°C
2.8 3.15
3.25
-
V
4
5
6.7
-
mV/°C
-
50
μA
-
1000
-
±100 nA
Dynamic Characteristics
TJ = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
gfs
Cies
Coes
Cres
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 50V, IC = 50A
VGE = 0V, VCE = 25V
f = 1MHz
Co(cr)
Co(er)
Reverse Transfer Capacitance
Charge Related 5
Reverse Transfer Capacitance
Current Related 6
VGE = 0V
VCE = 0 to 400V
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Ggc
Gate-Collector Charge
VGE = 0 to 15V
IC = 50A, VCE = 300V
td(on)
Turn-On Delay Time
tr
td(off)
Rise Time
Turn-Off Delay Time
Inductive Switching IGBT and
Diode:
tf
Eon1
Eon2
Fall Time
Turn-On Switching Energy 8
Turn-On Switching Energy 9
TJ = 25°C, VCC = 400V,
RG = 4.7ICΩ=7,5V0AGG = 15V
Eoff
Turn-Off Switching Energy 10
td(on)
tr
td(off)
tf
Eon1
Eon2
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy 8
Turn-On Switching Energy 9
Inductive Switching IGBT and
Diode:
TJ = 125°C, VCC = 400V,
RG
=
IC
4.7Ω
= 50A
7, VGG
=
15V
Eoff
Turn-Off Switching Energy 10
Min Typ Max
-
31
-
-
2635
-
-
240
-
-
145
-
-
115
-
85
-
235
-
-
18
-
-
100
-
-
16
-
-
33
-
-
225
-
-
37
-
-
TBD
-
-
1.2
-
-
0.755
-
-
33
-
-
33
-
-
250
-
-
23
-
-
TBD
-
-
1.7
-
-
0.950
-
Unit
S
pF
nC
ns
mJ
ns
mJ
 ▷