APT4F120K_10 Datasheet, PDF (4/4 Pages) Microsemi Corporation – 1200V, 4A, 4.2Ω Max Trr ≤195nS

20
10
I_DM
13µs
1
100µs
Rds(on)
1ms
10ms
T_J = 125°C
T_C = 75°C
0.1
1
10
100ms
DC line
100
1200
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
20
10
I_DM
Rds(on)
APT4F120K
13µs
1
T_J = 150°C
T_C = 25°C
100µs
1ms
10ms
100ms
DC line
Scaling for Different Case & Junction
Temperatures:
0.1
1
I_D = I_{D(TC = 25°C)}*(T_J - T_C)/125
10
100
1200
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
0.60
D = 0.9
0.50
0.40
0.7
0.30
0.20
0.10
0
10^-5
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
t₁ = Pulse Duration
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10^-4
10^-3
10^-2
10 ^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
TO-220 (K) Package Outline
e3 100% Sn Plated
1.39 (.055)
0.51 (.020)
Drain
16.25 (.639)
14.23 (.560)
3.42 (.135)
2.54 (.100)
4.08 (.161) Dia.
3.54 (.139)
0.50 (.020)
0.41 (.016)
2.92 (.115)
2.04 (.080)
4.82 (.190)
3.56 (.140)
3.683 (.145)
MAX.
14.73 (.580)
12.70 (.500)
1.01 (.040) 3-Plcs.
0.83 (.033)
2.79 (.110)
2.29 (.090)
5.33 (.210)
4.83 (.190)
Dimensions in Millimeters and (Inches)
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
6.85 (.270)
5.85 (.230)
Gate
Drain
Source
1.77 (.070) 3-Plcs.
1.15 (.045)
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