APT4F120K_10 Datasheet, PDF (3/4 Pages) Microsemi Corporation – 1200V, 4A, 4.2Ω Max Trr ≤195nS

10
V_GS = 10V
8
6
T_J = -55°C
4
T_J = 25°C
2
T_J = 125°C ^{TJ = 150°C}
0
0
5 10 15 20 25 30
V_DS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
3.0 _{NORMALIZED TO}
V_GS = 10V @ 2A
2.5
2.0
1.5
1.0
0.5
0-55 _{-25 0 25 50 75 100 125 150}
T_J, JUNCTION TEMPERATURE (°C)
Figure 3, R_DS(ON) vs Junction Temperature
5
4
T_J = -55°C
T_J = 25°C
3
T_J = 125°C
2
1
00
0.5
1.0
1.5
2.0
I_D, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
16
I_D = 2A
14
V_DS = 240V
12
10
V_DS = 600V
8
6
V_DS = 960V
4
2
0
0 10 20 30 40 50 60
Q_g, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
4.0
T_J = 125°C
3.5
APT4F120K
3.0
V_GS= 6, 7, 8 & 9V
2.5
2.0
5V
1.5
1.0
4.5V
0.5
0
0
5 10 15
20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
16
V_DS> I_D(ON) x R_DS(ON) MAX.
250µSEC. PULSE TEST
14 _{@ <0.5 % DUTY CYCLE}
12
10
T_J = -55°C
8
T_J = 25°C
6
T_J = 125°C
4
2
0
0
2,000
1,000
1 2 3 4 56 7 8
V_GS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
C_iss
100
C_oss
10
C_rss
1
0 200 400 600 800 1000 1200
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
16
14
12
10
8
T_J = 25°C
6
T_J = 150°C
4
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2
V_SD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage