APT44GA60BD30 Datasheet, PDF (4/9 Pages) Microsemi Corporation – High Speed PT IGBT

Typical Performance Curves
20
15
V_GE = 15V
10
5 _{VCE = 400V}
T_J = 25°C, or 125°C
R_G = 4.7Ω
L = 100μH
0
0 10 20 30 40 50 60
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
50
R_G = 4.7Ω, L = 100μH, V_CE = 400V
40
30
20
10
T_J = 25 or 125°C,V_GE = 15V
0
0 10 20 30 40 50 60
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
2000
1600
V_CE = 400V
V_GE = +15V
R_G = 4.7Ω
1200
800
T_J = 125°C
400
T_J = 25°C
0
0 10
20 30 40 50 60
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
3000
2500
V_CE = 400V
V_GE = +15V
T_J = 125°C
E_on2,52A
2000
E_on2,52A
1500
1000
E_off,26A
500
E_on2,26A
E_off,13A
E_on2,13A
0
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
APT44GA60B_SD30
150
125
100
V_GE =15V,T_J=125°C
75
V_GE =15V,T_J=25°C
50
25 ^VCE ^{= 400V}
R_G = 4.7Ω
L = 100μH
0
0 10 20 30 40 50 60
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
160
R_G = 4.7Ω, L = 100μH, V_CE = 400V
140
120
100
80
T_J = 125°C, V_GE = 15V
60
40
T_J = 25°C, V_GE = 15V
20
0
0 10 20 30 40 50 60
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
1400
1200
V_CE = 400V
V_GE = +15V
R_G = 4.7Ω
1000
800
T_J = 125°C
600
400
200
T_J = 25°C
00
10 20
30 40
50 60
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
2000
1600
V_CE = 400V
V_GE = +15V
R_G = 4.7Ω
E_on2,52A
1200
E_on2,52A
800
E_off,26A
400
E_off,26A
E_on2,13A
E_off,13A
00
25
50
75
100
125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature