English
Language : 

APT44GA60BD30 Datasheet, PDF (2/9 Pages) Microsemi Corporation – High Speed PT IGBT
Dynamic Characteristics
Symbol Parameter
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Qg
Total Gate Charge 3
Qge
Gate-Emitter Charge
Qgc
Gate- Collector Charge
SSOA
td(on)
tr
td(off)
tf
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon2
Eoff
Switching Safe Operating Area
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy 6
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy 6
TJ = 25°C unless otherwise specified
Test Conditions
Min
Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
Gate Charge
VGE = 15V
VCE= 300V
IC = 26A
TJ = 150°C, RG = 10Ω4, VGE = 15V,
130
L= 100uH, VCE = 600V
Inductive Switching (25°C)
VCC = 400V
VGE = 15V
IC = 26A
RG = 4.7Ω4
TJ = +25°C
Inductive Switching (125°C)
VCC = 400V
VGE = 15V
IC = 26A
RG = 4.7Ω4
TJ = +125°C
APT44GA60B_SD30
Typ
3404
358
43
128
22
Max
44
Unit
pF
nC
A
16
14
ns
84
29
409
μJ
258
14
15
ns
109
99
621
μJ
474
Thermal and Mechanical Characteristics
Symbol Characteristic
RθJC
RθJC
WT
Torque
Junction to Case Thermal Resistance (IGBT)
Junction to Case Thermal Resistance (Diode)
Package Weight
Mounting Torque (TO-247 Package), 4-40 or M3 screw
Min Typ Max Unit
-
-
.37
°C/W
0.8
-
5.9
-
g
10
in·lbf
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
3 See Mil-Std-750 Method 3471.
4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.