APT36GA60B Datasheet, PDF (4/6 Pages) Microsemi Corporation – High Speed PT IGBT

Typical Performance Curves
20
18
16
V_GE = 15V
14
12 ^VCE ^{= 400V}
T_J = 25°C, or 125°C
R_G = 10Ω
L = 100μH
10
0 5 10 15 20 25 30 35 40
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
40
R_G = 10Ω, L = 100μH, V_CE = 400V
35
30
25
20
15
10
T_J = 25 or 125°C,V_GE = 15V
5
0
0_{ICE, C}5_OLL1_E0_CTO1_R5_-TO2_-E0_MIT2_T5_ER 3_C0_URR3_E5_NT 4_(A0₎
FIGURE 11, Current Rise Time vs Collector Current
1500
1250
V_CE = 400V
V_GE = +15V
R_G =10Ω
1000
750
T_J = 125°C
500
250
T_J = 25°C
0
0 5 10 15 20 25 30 35 40
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
2000
1800
1600
V_CE = 400V
V_GE = +15V
T_J = 125°C
E_on2,40A
1400
1200
E_off,40A
1000
800
600
400
E_on2,20A
E_off,20A
E_on2,10A
200
E_off,10A
0
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
APT36GA60B_S
200
160
120
80
V_GE =15V,T_J=125°C
V_GE =15V,T_J=25°C
40
V_CE = 400V
R_G = 10Ω
L = 100μH
0
0 5 10
15 20 25 30
35 40
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
150
R_G = 10Ω, L = 100μH, V_CE = 400V
125
100
75
50
T_J = 125°C, V_GE = 15V
T_J = 25°C, V_GE = 15V
25
0 _{0 5 10 15 20 25 30 35 40}
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
1200
1000
V_CE = 400V
V_GE = +15V
R_G = 10Ω
800
T_J = 125°C
600
400
200
T_J = 25°C
0
0 5 10 15 20 25 30 35 40
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
1600
1400
1200
V_CE = 400V
V_GE = +15V
R_G = 10Ω
E_on2,40A
1000
800
E_off,40A
600
E_on2,20A
400
E_off,20A
200
E_on2,10A
E_off,10A
0
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature