APT36GA60B Datasheet, PDF (2/6 Pages) Microsemi Corporation – High Speed PT IGBT

Dynamic Characteristics
T_J = 25°C unless otherwise specified
APT36GA60B
Symbol Parameter
Test Conditions
Min Typ Max Unit
C_ies
Input Capacitance
Capacitance
2880
C_oes
Output Capacitance
C_res
Reverse Transfer Capacitance
V_GE = 0V, V_CE = 25V
f = 1MHz
226
pF
328
Q_g
Total Gate Charge
Gate Charge
102
Q_ge
Gate-Emitter Charge
V_GE = 15V
18
Q_gc
Gate- Collector Charge
V_CE= 300V
I_C = 20A
nC
34
SSOA
Switching Safe Operating Area
T_J = 150°C, R_G = 10Ω⁴, V_GE = 15V,
109
A
L= 100uH, V_CE = 600V
t_d(on)
Turn-On Delay Time
Inductive Switching (25°C)
16
t_r
Current Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Current Fall Time
E_on2
Turn-On Switching Energy
E6
off
Turn-Off Switching Energy
V_CC = 400V
V_GE = 15V
I_C = 20A
R_G = 10Ω⁴
T_J = +25°C
14
ns
122
77
307
μJ
254
t_d(on
Turn-On Delay Time
Inductive Switching (125°C)
14
t_r
Current Rise Time
t_d(off)
Turn-Off Delay Time
V_CC = 400V
V_GE = 15V
15
ns
149
t_f
Current Fall Time
E_on2
Turn-On Switching Energy
E6
off
Turn-Off Switching Energy
I_C = 20A
R_G = 10Ω⁴
T_J = +125°C
113
508
μJ
439
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
3 See Mil-Std-750 Method 3471
4 R_G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 E_on2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
6 E_off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.