APT32M80J Datasheet, PDF (4/4 Pages) Microsemi Corporation – N-Channel MOSFET

1000
100
I_DM
10
13μs
100μs
1ms
Rds(on) ^10ms
1
T_J = 125°C
T_C = 75°C
100ms
DC line
0.1 ₁
10
100
1000
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
APT32M80J
1000
100
I_DM
13μs
10
100μs
Rds(on)1ms
T_J = 150°C
1 ^{TC = 25°C}
10ms
100ms
DC line
Scaling for Different Case & Junction
Temperatures:
0.1
1
I_D = I_{D(TC = 25°C)}*(T_J - T_C)/125
10
100
1000
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
0.25
D = 0.9
0.20
0.7
0.15
0.10
0.05
0
10^-5
0.5
0.3
0.1
0.05
SINGLE PULSE
Note:
t1
t2
t₁ = Pulse Duration
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10 ^-4
10 ^-3
10 ^-2
10 ^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
r = 4.0 (.157)
(2 places)
SOT-227 (ISOTOP^®) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) ^{25.4 (1.000)}
0.85 (.033) 12.8 (.504)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
3.3 (.129)
3.6 (.143)
* Source
* Source
1.95 (.077)
2.14 (.084)
Drain
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
Gate
Dimensions in Millimeters and (Inches)
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