APT32M80J Datasheet, PDF (3/4 Pages) Microsemi Corporation – N-Channel MOSFET

Typical Performance Curves
100
90
V_GE = 10V
T_J= 55°C
80
70
T_J= 25°C
60
50
40
T_J= 125°C
30
20
T_J= 150°C
10
0
0
5 10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 1, Output Characteristics
3.5
NORMALIZED TO
3.0
V_GS = 10V @ 24A
2.5
2.0
1.5
1.0
0.5
0
0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
60 ^{FIGURE 3, RDS(ON) vs Junction Temperature}
50
T_J = -55°C
T_J = 25°C
40
T_J = 125°C
30
20
10
0
0
5 10 15 20 25 30 35
I_D, DRAIN CURRENT (A)
FIGURE 5, Gain vs Drain Current
12
I_D = 33A
10
V_DS = 120V
8
V_DS = 300V
6
V_DS = 480V
4
2
0
0
100
200
300
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 7, Gate Charge vs Gate-to-Source Voltage
60
T_J = 125°C
50
40
30
20
APT32M80J
10 & 15V
6 & 6.5V
5.5V
5V
10
4.5V
4V
0
0 5 10 15 20 25 30 35
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 2, Output Characteristics
160
140
V_DS> I_D(ON) x R_DS(ON) MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
120
T_J= 55°C
100
80
T_J= 25°C
60
40
T_J= 125°C
20
0
0
2
4
6
8
10
V_GS , GATE-TO-SOURCE VOLTAGE (V)
FIGURE 4, Transfer Characteristics
10,000
C_iss
1,000
100
C_oss
C_rss
10
0
200
400
600
80
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 6, CAPACITANCE VS DRAIN-TO-SOURCE VOLTAGE
200
160
120
80
T_J = 25°C
T_J = 150°C
40
0
0
0.4
0.8
1.2
1.6
V_SD, SOURCE-TO-DRAIN VOLTAGE (V)
FIGURE 8, Reverse Drain Current vs Source-to-Drain Voltage