APT28GA60K Datasheet, PDF (4/6 Pages) Microsemi Corporation – High Speed PT IGBT

Typical Performance Curves
16
V_CE = 400V
15
T_J = 25°C, or 125°C
R_G = 10Ω
14 ^{L = 100μH}
13
12
V_GE = 15V
11
10
9
8
0
5 10
15 20 25 30 35
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
35
R_G = 10Ω, L = 100μH, V_CE = 400V
30
25
20
15
10
5
T_J = 25 or 125°C,V_GE = 15V
0
0 5 10 15 20 25 30 35
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
1000
900
800
V_CE = 400V
V_GE = +15V
R_G =10Ω
700
T_J = 125°C
600
500
400
300
T_J = 25°C
200
100
0
0 5 10 15 20 25 30 35 40
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
1500
1250
V_CE = 400V
V_GE = +15V
T_J = 125°C
1000
750
E_on2,32A
E_off,32A
500
E_on2,16A
250
E_off,16A
E_on2,8A
E_off,8A
0
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
APT28GA60K
200
160
120
V_GE =15V,T_J=125°C
80
V_GE =15V,T_J=25°C
40
V_CE = 400V
R_G = 10Ω
L = 100μH
0
0 5 10 15 20 25 30 35
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
150
125
T_J = 125°C, V_GE = 15V
100
75
T_J = 25°C, V_GE = 15V
50
25
R_G = 10Ω, L = 100μH, V_CE = 400V
0
0
10
20
30
40
50
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
1000
900
800
V_CE = 400V
V_GE = +15V
R_G = 10Ω
700
T_J = 125°C
600
500
400
300
200
T_J = 25°C
100
0
0 5 10 15 20 25 30 35 40
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
1000
800
V_CE = 400V
V_GE = +15V
R_G = 10Ω
E_on2,32A
600
E_off,32A
400
E_on2,16A
200
E_off,16A
E_on2,8A
E_off,8A
0
0
25
50
75 100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature