APT28GA60K Datasheet, PDF (2/6 Pages) Microsemi Corporation – High Speed PT IGBT

Dynamic Characteristics
Symbol Parameter
C_ies
Input Capacitance
C_oes
Output Capacitance
C_res
Reverse Transfer Capacitance
Q_g3
Total Gate Charge
Q_ge
Gate-Emitter Charge
Q_gc
Gate- Collector Charge
SSOA
t_d(on)
t_r
t_d(off)
t_f
E_on2
E⁶
off
t_d(on
t_r
t_d(off)
t_f
E_on2
E⁶
off
Switching Safe Operating Area
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
T_J = 25°C unless otherwise specified
Test Conditions
Min
Capacitance
V_GE = 0V, V_CE = 25V
f = 1MHz
Gate Charge
V_GE = 15V
V_CE= 300V
I_C = 16A
T_J = 150°C, R_G = 10Ω⁴, V_GE = 15V,
84
L= 100uH, V_CE = 600V
Inductive Switching (25°C)
V_CC = 400V
V_GE = 15V
I_C = 16A
R_G = 10Ω⁴
T_J = +25°C
Inductive Switching (125°C)
V_CC = 400V
V_GE = 15V
I_C = 16A
R_G = 10Ω⁴
T_J = +125°C
Typ
2109
214
26
90
14
28
11
8
101
27
239
170
11
10
132
114
412
335
APT28GA60K
Max Unit
pF
nC
A
ns
μJ
ns
μJ
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
3 See Mil-Std-750 Method 3471.
4 R_G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 E_on2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
6 E_off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.