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APT15F50K_KF Datasheet, PDF (4/4 Pages) Microsemi Corporation – N-Channel FREDFET
100
TJ = 125°C
TC = 75°C
IDM
100
TJ = 125°C
TC = 75°C
APT15F50K_KF
10
Rds(on)
13μs
100μs
1ms
10ms
100ms
DC line
1
1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, 15F50K Forward Safe Operating Area
0. 6
D = 0.9
0. 5
0. 4
0.7
10
IDM
Rds(on)
13μs
100μs
1ms
10ms
100ms
DC line
1
1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, 15F50KF Forward Safe Operating Area
0. 3
0. 2
0. 1
0
10-5
0.5
0.3
0.1
0.05
SINGLE PULSE
Note:
t1
t2
t1 = Pulse Duration
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
0.1
1
RECTANGULAR PULSE DURATION (seconds)
Figure 11, 15F50K -Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
3.5
D = 0.9
3.0
2.5
0.7
2.0
1.5
1.0
0.5
0
10-5
0.5
0.3
0.1
0.05
SINGLE PULSE
10-4
10-3
Note:
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-2
0.1
1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 12, 15F50KFMaximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
TO-220 (K) Package Outline
e3 100% Sn Plated
1.39 (.055)
0.51 (.020)
Drain
16.25 (.639)
14.23 (.560)
3.42 (.135)
2.54 (.100)
4.08 (.161) Dia.
3.54 (.139)
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
6.85 (.270)
5.85 (.230)
TO-220 (KF) Package Outline
e3 100% Sn Plated
3.683 (.145)
MAX.
0.50 (.020)
0.41 (.016)
14.73 (.580)
12.70 (.500)
2.92 (.115)
2.04 (.080)
4.82 (.190)
3.56 (.140)
Dimensions in Millimeters and (Inches)
1.01 (.040) 3-Plcs.
0.83 (.033)
2.79 (.110)
2.29 (.090)
5.33 (.210)
4.83 (.190)
Gate
Drain
Source
1.77 (.070) 3-Plcs.
1.15 (.045)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.