APT15F50K_KF Datasheet, PDF (2/4 Pages) Microsemi Corporation – N-Channel FREDFET

Static Characteristics
T_J = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
Min
V_BR(DSS)
∆V_BR(DSS)/∆T_J
R_DS(on)
V_GS(th)
∆V_GS(th)/∆T_J
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source On Resistance ³
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
I_DSS
Zero Gate Voltage Drain Current
I_GSS
Gate-Source Leakage Current
V_GS = 0V, I_D = 250μA
Reference to 25°C, I_D = 250μA
V_GS = 10V, I_D = 7A
V_GS = V_DS, I_D = 0.5mA
V_DS = 500V T_J = 25°C
V_GS = 0V
T_J = 125°C
V_GS = ±30V
500
2.5
Dynamic Characteristics
T_J = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
Min
g_fs
Forward Transconductance
C_iss
Input Capacitance
C_rss
Reverse Transfer Capacitance
C_oss
Output Capacitance
V_DS = 50V, I_D = 7A
V_GS = 0V, V_DS = 25V
f = 1MHz
C_o(cr) ⁴
C_o(er) ⁵
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
V_GS = 0V, V_DS = 0V to 333V
APT15F50K_KF
Typ Max Unit
V
0.60
V/°C
0.33 0.39
Ω
4
5
V
-10
mV/°C
250
μA
1000
±100 nA
Typ Max Unit
11
S
2250
30
240
140
pF
70
Q_g
Q_gs
Q_gd
t_d(on)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
t_r
t_d(off)
t_f
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Source-Drain Diode Characteristics
Symbol
Parameter
Continuous Source Current _K
I_S
(Body Diode)
KF
Pulsed Source Current
K
I_SM
(Body Diode) ¹
KF
V_GS = 0 to 10V, I_D = 7A,
V_DS = 250V
Resistive Switching
V_DD = 333V, I_D = 7A
R_G = 10Ω ⁶ , V_GG = 15V
Test Conditions
MOSFET symbol
D
showing the
integral reverse p-n
junction diode
G
(body diode)
S
55
13
nC
26
10
12
ns
26
8
Min Typ Max Unit
15
6.2
A
45
18.6
V_SD
t_rr
Q_rr
I_rrm
dv/dt
Diode Forward Voltage ³
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
I_SD = 7A, T_J = 25°C, V_GS = 0V
T_J = 25°C
I_SD = 7A ³
V_DD = 100V
di_SD/dt = 100A/μs
T_J = 125°C
T_J = 25°C
T_J = 125°C
T_J = 25°C
T_J = 125°C
I_SD ≤ 7A, di/dt ≤1000A/μs, V_DD = 333V,
T_J = 125°C
1.0
190
340
0.54
1.27
5.9
7.9
20
V
ns
μC
A
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at T_J = 25°C, L = 12.45mH, R_G = 25Ω, I_AS = 7A.
3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
4 C_o(cr) is defined as a fixed capacitance with the same stored charge as C_OSS with V_DS = 67% of V_(BR)DSS.
5 C_o(er) is defined as a fixed capacitance with the same stored energy as C_OSS with V_DS = 67% of V_(BR)DSS. To calculate C_o(er) for any value of
V_DS less than V_(BR)DSS, use this equation: C_o(er) = -5.22E-8/V_DS^2 + 1.21E-8/V_DS + 3.48E-11.
6 R_G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.