APT11N80KC3G Datasheet, PDF (4/5 Pages) Microsemi Corporation – Super Junction MOSFET

33
OPERATION HERE
LIMITED BY R_DS (ON)
10
5
100μS
1
1mS
T_C =+25°C
T_J =+150°C
SINGLE PULSE
.1
1
10
100
800
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 11A
10mS
12
V_DS= 160V
8
V_DS= 400V
V_DS= 640V
4
0
0
20
40
60
80 100
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
70
60
t
d(off)
50
V_DD = 533V
40 ^RG ^{= 5Ω}
T_J = 125°C
L = 100μH
30
20
t
10
d(on)
0
5
8
11
14
17
20
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
500
400
300
200
E
on
V_DD = 533V
R_G = 5Ω
T_J = 125°C
L = 100μH
E_ON includes
diode reverse recovery.
100
E
off
0
5
8
11
14
17
20
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
10,000
1,000
100
APT11N80KC3
C_iss
C_oss
10
C_rss
1
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
100
T_J =+150°C
10
T_J =+25°C
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
40
t_f
30
V_DD = 533V
20 R_G = 5Ω
T_J = 125°C
L = 100μH
t_r
10
0
5
8
11
14
17
20
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
500
400
E
on
300
200
100
V_DD = 533V
E_off
I_D = 11A
T_J = 125°C
L = 100μH
E_ON includes
diode reverse recovery.
0
0 5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE