APT11N80KC3G Datasheet, PDF (1/5 Pages) Microsemi Corporation – Super Junction MOSFET

APT11N80KC3
800V 11A 0.450Ω
Super Junction MOSFET
• Ultra Low R_DS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Q_g
• Avalanche Energy Rated
• Extreme ^dv/dt Rated
TO-220
GDS
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T_C = 25°C unless otherwise specified.
APT11N80KC3
UNIT
V_DSS
I_D
I_DM
V_GS
V_GSM
P_D
Drain-Source Voltage
Continuous Drain Current @ T_C = 25°C
Pulsed Drain Current ¹
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T_C = 25°C
Linear Derating Factor
800
11
33
±20
±30
156
1.25
Volts
Amps
Volts
Watts
W/°C
T_J,T_STG
T_L
dv_/dt
I_AR
E_AR
E_AS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (V_DS = 640V, I_D = 11A, T_J = 125°C)
Repetitive Avalanche Current ⁷
Repetitive Avalanche Energy ⁷
Single Pulse Avalanche Energy ⁴
-55 to 150
260
50
11
0.2
470
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BV_DSS
R_DS(on)
I_DSS
I_GSS
V_GS(th)
Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 250μA)
Drain-Source On-State Resistance ² (V_GS = 10V, I_D = 7.1A)
Zero Gate Voltage Drain Current (V_DS = 800, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 800, V_GS = 0V, T_J = 150°C)
Gate-Source Leakage Current (V_GS = ±20V, V_DS = 0V)
Gate Threshold Voltage (V_DS = V_GS, I_D = 680μA)
800
0.39 0.45
0.5 20
200
±100
2.1
3
3.9
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
Ohms
μA
nA
Volts
"COOLMOS^™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG"
Microsemi Website - http://www.microsemi.com