APL502B2 Datasheet, PDF (4/4 Pages) Advanced Power Technology – LINEAR MOSFET

400
100
I_DM
400
100
I_DM
APL502B2_L(G)
10
13mS
R_ds(on)
100mS
1mS
1
10mS
100mS
T_J = 125^°C
DC line
0.1 ^{TC = 75°C}
1
10
100
800
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, FORWARD SAFE OPERATING AREA
30,000
10,000
5,000
1,000
500
10
13mS
R_ds(on)
100mS
1mS
1 ^{TJ = 150°C}
10mS
T_C = 25^°C
100mS
Scaling for Different Case & Junction
DC line
Temperatures:
0.1
I_D = I_{D (TC = 25°C)}*(T_C - T_J)/125
1
10
100
800
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, MAXIMUM FORWARD SAFE OPERATING AREA
C_iss
C_oss
C_rss
100
.01
.1
1
10
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 12, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
T-MAX^TM (B2) Package Outline
TO-264 (L) Package Outline
e1 SAC 96.5% Sn, 3.0% Ag, 0.5% Cu Plated
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
20.80 (.819)
21.46 (.845)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
3.10 (.122)
3.48 (.137)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.