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| APL502B2 Datasheet, PDF (1/4 Pages) Advanced Power Technology – LINEAR MOSFET | |||
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APL502B2(G)
APL502L(G)
500V, 58A, 0.090Ω
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
LINEAR MOSFET
Linear Mosfets are optimized for applications operating in the Linear
region where concurrent high voltage and high current can occur at
near DC conditions (>100 msec).
T-MaxTM
TO-264
⢠Higher FBSOA
⢠Popular T-MAX⢠or TO-264 Package
⢠Higher Power Dissipation
D
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise speciï¬ed.
Symbol Parameter
APL502B2_L (G)
UNIT
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
500
58
232
±30
±40
730
5.84
-55 to 150
300
58
50
3000
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
MIN TYP MAX UNIT
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA)
500
ID(ON) On State Drain Current 2 (VDS > ID(ON) x RDS(ON) Max, VGS = 12V)
58
RDS(ON) Drain-Source On-State Resistance 2 (VGS = 12V, 29A)
IDSS
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
2
0.09
25
250
±100
4
Volts
Amps
Ohms
μA
nA
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
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