UPS5100E3 Datasheet, PDF (3/5 Pages) Microsemi Corporation – 5 A High Voltage Schottky Barrier Rectifier

UPS5100e3
5 A High Voltage Schottky Barrier Rectifier
Notes: 1. T_A = T_{SOLDERING POINT,} R_ΘJS = 2.5C/W, R_ΘSA = 0ºC/W.
2. Device mounted on GETEK substrate, 2" x 2", 2 oz. copper , double-sided , cathode
pad dimensions 0.75" x 1.0", anode pad dimensions 0.25" x 1.0". R_ΘJA in range of
20-35°C/W.
3. Device mounted on FRA-4 substrate, 2" x 2", 2 oz. copper, single-sided, pad layout
R_ΘJA in range of 65°C/W. See mounting pad below.
MOUNTING PAD LAYOUT
Copyright © 2007
10-15-2007 Rev C
Mounting Pad Dimensions: inches [mm]
Microsemi
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