MRF5943 Datasheet, PDF (3/5 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF5943, R1, R2
FUNCTIONAL
Symbol
Test Conditions
G
U max
MAG
|S₂₁|²
Maximum Unilateral Gain
IC = 35 mAdc, VCE = 15 Vdc, f = 300 MHz
Maximum Available Gain
IC = 35 mAdc, VCE = 15 Vdc, f = 300 MHz
Insertion Gain
IC = 35 mAdc, VCE = 15 Vdc, f = 300 MHz
Value
Min.
Typ.
Max.
Unit
-
15
-
dB
-
17
-
dB
11.5
12.5
-
dB
Table 1. Common Emitter S-Parameters, @ VCE = 15 V, IC = 35 mA
f
(MHz)
10
30
50
70
100
300
500
700
1000
S11
|S11|
0.606
0.618
0.626
0.637
0.648
0.691
0.713
0.719
0.722
∠φ
-61
-120
-140
-151
-160
-178
172
161
153
S21
|S21|
54.49
35.44
24.09
17.89
12.8
4.3
2.53
1.79
1.22
∠φ
152
122
108
101
94
74
61
50
35
S12
|S12|
0.006
0.013
0.015
0.017
0.02
0.04
0.056
0.07
0.09
∠φ
67
47
44
44
47
57
58
59
62
S22
|S22|
0.87
0.579
0.441
0.377
0.335
0.313
0.348
0.391
0.449
∠φ
-20
-31
-35
-33
-29
-31
-44
-58
-75
MSC1321.PDF 10-25-99