MRF5943 Datasheet, PDF (1/5 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: [phone]
FAX: [phone]
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
MRF5943, R1, R2
Features
• Low Cost SO-8 Plastic Surface Mount Package.
• S-Parameter Characterization
• Tape and Reel Packaging Options Available
• Maximum Available Gain = 17dB @ 300MHz
SO-8
R1 suffix–Tape and Reel, 500 units
R2 suffix–Tape and Reel, 2500 units
DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, drivers,
Oscillators, etc.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
Thermal Data
P
D
T
stg
R_θJA
Total Device Dissipation @ TC = 25ºC
Derate above 25ºC
Storage Temperature
Thermal Resistance, Junction to Ambient
MSC1321.PDF 10-25-99
Value
30
40
3.5
400
1.0
8
150
125
Unit
Vdc
Vdc
Vdc
mA
Watts
mW/ ºC
ºC
ºC/W