MRF586 Datasheet, PDF (3/4 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF586
FUNCTIONAL
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
G
U max
Maximum Unilateral Gain (1) IC = 40 mAdc, VCE = 15Vdc,
f = 300 MHz
-
12.5
-
dB
MAG
Maximum Available Gain
IC = 40 mAdc, VCE = 15Vdc,
f = 300 MHz
-
13.5
-
dB
|S₂₁|²
Insertion Gain
IC = 40 mAdc, VCE = 15Vdc,
f = 300 MHz
10
11.5
-
dB
Table 1. Common Emitter S-Parameters, @ VCE = 15 V, IC = 40 mA
f
(MHz)
100
200
300
400
500
600
700
800
900
1000
S11
|S11|
∠φ
.096
107
.129
114
.165
108
.185
115
.237
115
.247
112
.247
113
.238
118
.260
119
.246
116
S21
|S21|
∠φ
10.28
103
5.58
89
3.94
79
3.04
71
2.64
67
2.42
60
2.26
54
2.06
48
1.97
47
2.06
43
S12
|S12|
∠φ
.053
84
.104
83
.160
76
.192
74
.246
75
.288
71
.326
69
.334
67
.369
71
.405
67
S22
|S22|
∠φ
.479
-40
.361
-49
.356
-56
.388
-71
.384
-79
.408
-82
.417
-84
.432
-87
.420
-91
.444
-92
MSC1320.PDF 10-25-99