MRF586 Datasheet, PDF (1/4 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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FAX: [phone]
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Silicon NPN, To-39 packaged VHF/UHF Transistor
• Ftau = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA,
•
G
U max
= 12.5dB (typ) @ 300 MHz, 15v, 40mA
• |S₂₁|² = 12.5dB (typ) @ 300 MHz, 15v, 40mA
MRF586
1. Emitter
2. Base
3. Collector
TO-39
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and
output stages. Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
Thermal Data
P
D
Total Device Dissipation @ T_A = 25ºC
Derate above 25ºC
Value
20
35
3.0
200
1.0
5.71
Unit
Vdc
Vdc
Vdc
mA
Watts
mW/ ºC
MSC1320.PDF 10-25-99