MRF545 Datasheet, PDF (3/4 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF545
FUNCTIONAL
Symbol
G
U max
MAG
|S₂₁|²
Test Conditions
Maximum Unilateral Gain
Maximum Available Gain
Insertion Gain
IC = 50 mAdc, VCE = 25Vdc,
f = 200 MHz
IC = 50 mAdc, VCE = 25Vdc,
f = 200 MHz
IC = 50 mAdc, VCE = 25Vdc,
f = 200 MHz
Min.
-
-
11.5
Value
Typ.
14
14.5
12.5
Max.
-
-
-
Unit
dB
dB
dB
Table 1. Common Emitter S-Parameters, @ VCE = 25 V, IC = 50 mA
f
(MHz)
100
200
300
400
500
600
700
800
900
1000
S11
|S11|
0.139
0.162
0.522
0.260
0.275
0.262
0.333
0.327
0.517
0.463
∠φ
-105
-168
130
129
133
123
118
122
97
115
S21
|S21|
7.43
4.35
1.7
2.23
1.74
1.49
0.951
1.3
1.21
1.07
∠φ
101
80
75
63
54
46
45
35
30
27
S12
|S12|
0.031
0.066
0.113
0.154
0.188
0.226
0.925
0.379
0.402
0.437
∠φ
83
82
85
85
71
74
75
66
61
63
S22
|S22|
∠φ
0.573
-19
0.508
-23
0.493
-29
0.487
-43
0.445
-53
0.495
-69
0.456
-71
0.424
-85
0.393
-109
0.375
-115
MSC1315.PDF 10-25-99