MRF545 Datasheet, PDF (1/4 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: [phone]
FAX: [phone]
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Silicon PNP, high Frequency, high breakdown, To-39 packaged,
Transistor
• Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz
• High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
• High F_T - 1400 MHz
MRF545
1. Emitter
2. Base
3. Collector
TO-39
DESCRIPTION:
Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other
applications requiring high breakdown characteristics.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
Thermal Data
P
D
Tstg
Total Device Dissipation @ T_A = 25ºC
Derate above 25ºC
Storage Temperature Range
Value
Unit
70
Vdc
100
Vdc
3.0
Vdc
400
mA
3.5
20
-65 to +200
Watts
mW/ ºC
ºC
MSC1315.PDF 10-25-99