JANS2N3867 Datasheet, PDF (3/4 Pages) Microsemi Corporation – PNP SILICON LOW POWER TRANSISTOR

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: [phone] Fax: [phone]
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Delay Time
Rise Time
V_CC = -30dc, V_EB = 0
I_C = 1.5Adc, I_B1 = 150mAdc
Storage Time
Fall Time
V_CC = -30dc, V_EB = 0
I_C = 1.5Adc, I_B1 = I_B2 = 150mAdc
Turn-On Time
V_CC = 30, I_C = 1.5Adc, I_B = 150mA
Turn-Off Time
V_CC = 30, I_C = 1.5Adc, I_B = 150mA
SAFE OPERATING AREA
DC Test
T_C = 25°C, 1 cycle, t = 1.0s
Test 1
V_CE = 3.33Vdc, I_C = 3.0Adc
Test 2
V_CE = 40Vdc, I_C = 160mAdc
V_CE = 60Vdc, I_C = 80mAdc
2N3867,
2N3868, S
Symbol
t_d
t_r
t_s
t_f
t_on
t_off
Min.
Max.
Unit
35
65
nS
500
100
nS
100
nS
600
nS
T4-LDS-0170 Rev. 1 (101121)
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