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| JANS2N3867 Datasheet, PDF (2/4 Pages) Microsemi Corporation – PNP SILICON LOW POWER TRANSISTOR | |||
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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions
ON CHARACTERTICS (2)
Forward-Current Transfer Ratio
IC = 500mAdc, VCE = 1.0Vdc
IC = 1.5Adc, VCE = 2.0Vdc
IC = 2.5Adc, VCE = 3.0Vdc
IC = 3.0Adc, VCE = 5.0Vdc
2N3867, S
2N3868, S
2N3867, S
2N3868, S
2N3867, S
2N3868, S
2N3867, S
2N3868, S
Symbol
Min.
50
35
40
30
hFE
25
20
20
20
IC = 500mAdc, VCE = 1.0Vdc, TA = -55°C
Collector-Emitter Saturation Voltage
IC = 500mAdc, IB = 50mAdc
IC = 1.5Adc, IB = 150mAdc
IC = 2.5Adc, IB = 250mAdc
2N3867, S
2N3868, S
25
17
VCE(sat)
Base-Emitter Saturation Voltage
IC = 500mA, IB = 50mAdc
IC = 1.5A, IB = 150mAdc
IC = 2.5A, IB = 250mAdc
2N3867, S
2N3868, S
VBE(sat)
0.9
0.85
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short Circuit
Forward Current Transfer Ratio
IC = 100mAdc, VCE = 5.0Vdc, f = 20MHz
Output Capacitance
VCB = 10Vdc, IE = 0, 100 kHz ⤠f ⤠1.0MHz
Iutput Capacitance
VEB = 3.0Vdc, IC = 0, 100 kHz ⤠f ⤠1.0MHz
Symbol
|hfe|
Min.
3
Cobo
Cibo
(2) Pulse Test: Pulse Width = 300μs, Duty Cycle ⤠2.0%
Max.
Unit
200
150
0.5
0.75
Vdc
1.5
1.0
1.4
Vdc
1.4
2.0
Max.
Unit
12
kâ¦
120
pF
800
pF
T4-LDS-0170 Rev. 1 (101121)
Page 2 of 4
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