JAN1N6461 Datasheet, PDF (3/6 Pages) Microsemi Corporation – Voidless Hermetically Sealed Unidirectional Voidless Hermetically Sealed Unidirectional

1N6461US – 1N6468US
ELECTRICAL CHARACTERISTICS
TYPE
1N6461US
1N6462US
1N6463US
1N6464US
1N6465US
1N6466US
1N6467US
1N6468US
MINIMUM
BREAK
DOWN
VOLTAGE
V (BR)
@ I(BR)
Volts
5.6
6.5
13.6
16.4
27.0
33.0
43.7
54.0
BREAKDOWN
CURRENT
I (BR)
RATED
WORKING
STANDOFF
VOLTAGE
V WM
mA
V (pk)
25
5
20
6
5
12
5
15
2
24
1
30.5
1
40.3
1
51.6
MAXIMUM
STANDBY
CURRENT
ID
@ VRWM
MAXIMUM
CLAMPING
VOLTAGE
VC
@ 10/1000 µs
µA
3000
2500
500
500
50
3
2
2
V (pk)
9.0
11.0
22.6
26.5
41.4
47.5
63.5
78.5
MAXIMUM
PEAK IMPULSE
CURRENT
I PP
MAXIMUM
TEMP. COEF.
OF
α V(BR)
@ 8/20
µs
A (pk)
315
258
125
107
69
63
45
35
@ 10/1000
µs
A (pk)
56
46
22
19
12
11
8
6
%/^oC
-0.03, +0.045
+0.060
+0.085
+0.085
+0.096
+0.098
+0.101
+0.103
T4-LDS-0286-1, Rev. 1 (4/22/13)
©2013 Microsemi Corporation
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