ARF301 Datasheet, PDF (3/4 Pages) Microsemi Corporation – RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE

Dynamic Characteristics
5
4
3
2
-50
0
50
100
150
T_C, CASE TEMPERATURE (°C)
Figure 4, Typical Threshold Voltage vs Temperature
ARF301
25
10 and 15V
8.0V
20
7.5V
15
7V
6.5V
10
6V
5
5.5V
0
0
5 10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5, Typical Output Characteristics
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
SINGLE PULSE
0
10^-4
10^-3
10^-2
10^-1
0.1
1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 6a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Dissipated Power
(Watts)
T_J (˚C)
T_C (˚C)
0.048
0.0160
0.037
0.094
0.064
0.490
Z_EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Figure 6b, TRANSIENT THERMAL IMPEDANCE MODEL
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
2.0
13.56
27.12
40.68
Z_in (Ω)
18 - j 10.6
2.7 - j 4.5
1.9 - j 1.6
1.77 - j 0.18
Z_OL (Ω)
20.9 - j 1.3
17.8 - j 7.4
12.3 - j 10.2
8.0 - j 10
Z_IN - Gate shunted with 25Ω
I_dq = 0
Z_OL - Conjugate of optimum load for 300 Watts output at V_dd=125V