ARF301 Datasheet, PDF (2/4 Pages) Microsemi Corporation – RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE

Dynamic Characteristics
Symbol
Parameter
C_ISS
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
Test Conditions
V_GS = 0V
V_DS = 50V
f = 1MHz
Functional Characteristics
Symbol
Characteristic
G_PS
Common Source Amplifier Power Gain
η
Drain Efficiency
Ψ
Electrical Ruggedness VSWR 10:1
1. Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%.
Test Conditions
f = 27MHz
I_dq = 0mA V_DD = 125V
P_OUT = 300W
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
ARF301
Min
Typ
Max
Unit
2000 2200
320
360
pF
62
70
Min
Typ
Max
Unit
15
17
dB
80
85
%
No Damage
Dynamic Characteristics
1.0E−8
C_iss
1.0E−9
C_oss
1.0E−10
C_rss
1.0E−11
0
50 100 150 200 250 300
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1, Typical Capacitance vs. Drain-to-Source Voltage
36
V_DS> I_D (ON) x R_DS (ON)MAX.
32
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
28
T_J = -55°C
24
20
T_J = +25°C
16
12
8
4
0
02
T_J = +125°C
4
6
8 10 12
V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Transfer Characteristics
100
OPERATION HERE
LIMITED BY R_DS (ON)
ID Max
10
T_C =+25°C
T_J =+175°C
SINGLE PULSE
1
1
10
100
800
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Maximum Safe Operating Area