APT60N60BCS Datasheet, PDF (3/5 Pages) Advanced Power Technology – Super Junction MOSFET

Typical Performance Curves
200
180
160
V_DS> I_D(ON) x R_DS(ON) MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
140
120
100
80
T_J = -55°C
60
40
T_J = +25°C
20
T_J = +125°C
0
01 2 3 4 5 6 78
V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TRANSFER CHARACTERISTICS
60
50
40
30
20
10
0
25
50
75
100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 5, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I_D = 44A
V_GS = 10V
2.0
1.5
1.0
0.5
0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, ON-RESISTANCE vs. TEMPERATURE
APT60N60B_SCS(G)
140
15, 10 & 7V
120
6.5V
6V
100
80
60
5.5V
40
5V
20
4.5V
0
0
5
10
15
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
NORMALIZED TO
1.30
V_GS = 10V @ 44A
1.20
1.10
V_GS=10V
1.00
0.90
V_GS=20V
0.80
0 20 40 60 80 100 120 140
I_D, DRAIN CURRENT (AMPERES)
FIGURE 4, R_DS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 6, BREAKDOWN VOLTAGE vs TEMPERATURE
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, THRESHOLD VOLTAGE vs TEMPERATURE