APT60N60BCS Datasheet, PDF (1/5 Pages) Advanced Power Technology – Super Junction MOSFET

600V 60A 0.045Ω
APT60N60BCS APT60N60SCS
APT60N60BCSG* APT60N60SCSG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
COOL MOS
Po we r Se miconduc tors
Super Junction MOSFET
• Ultra Low R_DS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Q_g
• Avalanche Energy Rated
• Extreme ^dv/dt Rated
• Popular TO-247 or Surface Mount D³ Package
(B)
TO-247
D³PAK
(S)
D
G
S
MAXIMUM RATINGS
Symbol Parameter
V_DSS
I_D
I_DM
V_GS
P_D
Drain-Source Voltage
Continuous Drain Current @ T_C = 25°C
Continuous Drain Current @ T_C = 100°C
Pulsed Drain Current ¹
Gate-Source Voltage Continuous
Total Power Dissipation @ T_C = 25°C
Linear Derating Factor
T_J,T_STG
T_L
dv/dt
I_AR
E_AR
E_AS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
MOSFET dv/dt Ruggedness (V_DS = 480V)
Avalanche Current ²
Repetitive Avalanche Energy ²
Single Pulse Avalanche Energy ³
All Ratings: T_C = 25°C unless otherwise specified.
APT60N60B_SCS(G) UNIT
600
Volts
60
38
Amps
230
±30
Volts
431
Watts
3.45
W/°C
-55 to 150
°C
260
50
V/ns
11
Amps
3
mJ
1950
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
V_(BR)DSS Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 250μA)
600
R_DS(on) Drain-Source On-State Resistance ⁴ (V_GS = 10V, I_D = 44A)
I_DSS
Zero Gate Voltage Drain Current (V_DS = 600V, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 600V, V_GS = 0V, T_C = 150°C)
I_GSS Gate-Source Leakage Current (V_GS = ±20V, V_DS = 0V)
0.045
25
250
±100
V_GS(th) Gate Threshold Voltage (V_DS = V_GS, I_D = 3mA)
2.1
3
3.9
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Volts
Ohms
μA
nA
Volts
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG."
Microsemi Website - http://www.microsemi.com