APT47N65BC3G Datasheet, PDF (3/5 Pages) Microsemi Corporation – Increased Power Dissipation

Typical Performance Curves
120
100
V_DS> I_D (ON) x R_DS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
80
60
T_J = -55°C
T_J = +25°C
40
T_J = +125°C
20
0
0123 4 56 7
V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TRANSFER CHARACTERISTICS
50
40
30
20
10
0
25
50
75
100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 5, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
3
I_D = 47A
2.5
V_GS = 10V
2.0
1.5
1.0
0.5
0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, ON-RESISTANCE vs. TEMPERATURE
APT47N65BC3
180
V_GS =15 & 10V
160
6.5V
140
120
6V
100
80
5.5V
60
5V
40
4.5V
20
4V
00
5
10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
NORMALIZED TO
1.30
V_GS = 10V @ 23.5A
1.20
1.10
1.00
0.90
V_GS=10V
V_GS=20V
0.80
0 10 20 30 40 50 60 70 80 90
I_D, DRAIN CURRENT (AMPERES)
FIGURE 4, R_DS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 6, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, THRESHOLD VOLTAGE vs TEMPERATURE