APT47N65BC3G Datasheet, PDF (2/5 Pages) Microsemi Corporation – Increased Power Dissipation

DYNAMIC CHARACTERISTICS
APT47N65BC3
Symbol Characteristic
Test Conditions
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_on
E_off
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ³
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy ⁶
Turn-off Switching Energy
Turn-on Switching Energy ⁶
Turn-off Switching Energy
V_GS = 0V
V_DS = 25V
f = 1 MHz
V_GS = 10V
V_DD = 300V
I_D = 47A @ 25°C
INDUCTIVE SWITCHING
V_GS = 13V
V_DD = 380V
I_D = 47A @ 125°C
R_G = 5Ω
INDUCTIVE SWITCHING @ 25°C
V_DD = 400V, V_GS = 15V
I_D = 47A, R_G = 5Ω
INDUCTIVE SWITCHING @ 125°C
V_DD = 400V V_GS = 15V
I_D = 47A, R_G = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
7015
2565
210
260
29
110
18
27
110
6965
2100
85
250
30
105
18
28
295
8
84
670 775
980 860
1100 1172
1200 985
MIN TYP MAX
UNIT
pF
nC
ns
μJ
UNIT
I_S
Continuous Source Current (Body Diode)
I_{SM Pulsed Source Current} ¹ _{(Body Diode)}
V_SD
Diode Forward Voltage ² (V_GS = 0V, I_S = -47A)
t _rr
Reverse Recovery Time (I_S = -47A, dl_S/dt = 100A/μs, V_R = 350V)
Q _rr Reverse Recovery Charge (I_S = -47A, dl_S/dt = 100A/μs, V_R = 350V)
dv_/dt
Peak Diode Recovery ^dv/_dt ⁵
THERMAL CHARACTERISTICS
Symbol Characteristic
47
Amps
141
1.2
Volts
580 650
ns
23 16.5 ^μC
6
V/ns
MIN TYP MAX UNIT
R_θJC
R_θJA
Junction to Case
Junction to Ambient
0.30
62
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4
5
S_ddvet/av_dri_ttcinneugimtsTeb_{j l=ef.r+s2ISr5e=}°_flCe_-c,ItDLt4h=7eA3l6i,m.0_dimtia/dHt_{tio,=nRs7G0o0=fAt2h/5μe}Ω_{ste, sPVteRca=irkcVuIDLiSt=Sr,a1t0ThJ}Ae_=r
than the
150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
calculated as P_AV=E_AR*f
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
0.35
0.30
0.9
0.25
0.7
0.20
0.5
0.15
Note :
0.10
0.3
t1
0.05
0.1
SINGLE PULSE
t2
Duty Factor D = ^t1/t2
0.05
Peak T _J = P _DM x Z _θJC + T _C
0
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION