APT30M85BVRG Datasheet, PDF (3/44 Pages) Microsemi Corporation – Power Semiconductors Power Modules

Insulated Gate Bipolar Transistors (IGBTs)
IGBTs from Microsemi
IGBT products from Microsemi provide high quality solutions for a wide range of high voltage, high power applications. The switching
frequency range spans from DC for minimal conduction loss to over 100kHz for very high power density SMPS applications. The fre-
quency range for each product type is shown in the graph below. Each IGBT product represents the latest in IGBT technology, providing
the best possible performance/cost combination for the targeted application. There are six product series that utilize three different
IGBT technologies: Non-Punch-Through (NPT), Punch-Through (PT) and Field Stop.
IGBT Switching Frequency Ranges (kHz, hard switched)
10
20
30
40
50
60
70
80
90
100
110
120
Field Stop
600V
900V
Power MOS 8^TM PT
Thunderbolt^® NPT
Thunderbolt^® High Speed (HS) NPT
Power MOS 8^TM PT
Field Stop
1200V
Fast NPT
Power MOS 7^TM PT
Thunderbolt^® NPT
Power MOS 8^TM NPT (NEW!)
Note: Frequency ranges shown are typical for a 50A IGBT. Refer to product data sheet max frequency vs current graph for more information.
Standard
Series
Thunderbolt®
Thundebolt®
High Speed
FAST
MOS 7™
MOS 8™
Field Stop
Trench Gate
Voltage
Ratings (V)
600, 1200
600
Technology
NPT
NPT
Easy to
Parallel
X
X
Short Circuit Comment
SOA
X
General purpose, high speed
X
Highest speed
1200
NPT
X
1200
PT
600, 900, 1200 PT, NPT
600, 1200
Field Stop
X
X
General purpose, medium
speed
Ultra-low gate charge
Highest efficiency
X
Lowest conduction loss
Product Options
All standard IGBT products are available as a single IGBT or as a Combi product packaged with an anti-parallel DQ series diode.
Package options include TO-220, TO-247, T-MAX^®, TO-264, and SOT-227. Customized products are available; contact factory for details.
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