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| APT30M85BVRG Datasheet, PDF (20/44 Pages) Microsemi Corporation – Power Semiconductors Power Modules | |||
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Rugged Custom Power Modules
Microsemi PMP has acquired a great experience and
know-how in module customization to address rugged
and wide temperature range application and offers
solution to meet with next generation integrated
power systems expectation in terms of:
s )MPROVED 2ELIABILITY
s 7IDER /PERATING 4EMPARATURES
s (IGHER 0OWER
s (IGHER %FlCIENCY
s ,OWER 7EIGHT AND 3IZE
s ,OWER #OST
Applications
s !VIONICS ACTUATION SYSTEM
s !VIONICS LIFT AND PUMP
s -ILITARY GROUND VEHICULE
s POWER SUPPLY AND MOTOR CONTROL
s .AVY SHIP AUXILIARY POWER SUPPLY
s $OWN HOLE DRILLING
Test Capabilities
s 8
RAYS INSPECTION
s $IELECTRIC TEST UP TO +6
s %LECTRICAL TESTING AT SPECIlED TEMPERATURE
s "URN
IN
s !COUSTIC IMAGING
Reliability Testing Capabilities
s 0OWER CYCLING
s (ERMETIC SEALING
s -OISTURE
s 3ALT ATMOSPHERE
s (4'"
s 4EMPERATURE SHOCK
s (!34
s (42"
s !LTITUDE
s -ECHANICAL SHOCK VIBRATION
Expertise Capabilities
s #ROSS
SECTIONING
s 3TRUCTURAL ANALYSIS
All tests can be conducted upon demand by sampling or
at 100%. Tests performed in house or with external lab.
Our Core Competencies
s %XTENSIVE EXPERIENCE OF RUGGED SOLUTIONS FOR
harsh environments
s 7IDE RANGE OF 3ILICON TECHNOLOGIES
s 7AFER FAB CAPABILITIES
s -IX OF ASSEMBLY TECHNOLOGIES
s (ERMETIC AND ROBUST PLASTIC PACKAGES
s #USTOM TEST BURN
IN SOLUTIONS
s )3/ CERTIlED
s %ND
OF
LIFE OBSOLESCENCE MANAGEMENT
s 4HERMAL MANAGEMENT
s -ATERIAL EXPERTISE
s 0RODUCT LIFE MANAGEMENT ASSOCIATED TO RISKS
analysis
Various solutions are proposed offering different cost and low volume of entry:
Standard Module
Modiï¬ed Standard
Custom Module
Industrial
Application
X
X
X
Extended
Temperature
Application
X
X
Harsh
Environment
Application
X
No NRE
Low Volume Entry
Low NRE
Low Volume Entry
Medium to High NRE
Low Volume Entry
DBC
Solder
Substrate Joint
Dice
Solder
Joint
Base
Plate
CTE
Thermal Rthjc
(ppm/K) conductivity (K/W)
(W/m.K)
Silicon Die (120 mm2) 4
Cu/Al2O3
17/7
AlSiC/Al2O3
7/7
Cu/AlN
17/5
AlSiC/AlN
7/5
AlSiC/Si3N4
7/3
136
390/25
0.35
170/25
0.38
390/170
0.28
170/170
0.31
170/60
0.31
Material CTE
Thermal Density
(ppm/K) conductivity (g/cc)
(W/m.K)
CuW
6.5
Base plate AlSiC
7
Cu
17
190
17
170
2.9
390
8.9
Al2O3
7
25
-
Substrate AlN
5
170
-
Si3N4
3
60
-
Die
Si
4
136
-
SiC
2.6
270
-
Module performance and
reliability depends on the choice
of the assembly materials
More closely matched materials TCEâs increase the
module life time because it will result in much less
stress at the interface of the materials and inside the
materials.
The higher the thermal conductivity, the lower is the
junction to case thermal resistance and the lower
will be the delta of junction temperature of the
device during operation such that the effect of power
cycling on the dice will be minimized.
Another important feature is the material density
particularly for the baseplate. Taking copper as
the reference, Alsic has a density of 1/3 while Cuw
has twice the density. Therefore AlSiC will provide
substantial weight reduction at the same time as
reliability increase.
20
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